Mechanisms of Enhanced Efficiency and Stability in Perovskite Luminescence via Rb Interstitial Doping.
Perovskite luminescence gets a boost! Rb interstitial doping enhances efficiency and stability by increasing exciton binding and slowing halide migration. A game-changer for next-gen optoelectronics.
This study used first-principles calculations to investigate how different alkali metal doping strategies impact the electronic properties and ion migration kinetics of CsPbBr3 perovskites. The key findings show that Rb interstitial doping increases the effective mass of charge carriers, enhancing exciton binding and radiative recombination. Crucially, Rb interstitial occupancy also suppresses halide ion migration by extending diffusion pathways and strengthening Br- interactions. This dramatically increases the migration barrier, leading to high photoluminescence quantum yield and thermal stability. These insights offer a new approach to optimize perovskite-based optoelectronic devices.